Cart (Loading....) | Create Account
Close category search window
 

The Simulation of a new asymmetrical double-gate poly-Si TFT with modified channel conduction mechanism for highly reduced OFF-state leakage current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Orouji, A.A. ; Dept. of Electr. Eng., Semnan Univ., Iran ; Kumar, M.J.

Poly-Si thin film transistors (TFTs) exhibit large OFF-state reverse leakage currents since their channel conduction is controlled by the gate-induced grain barrier lowering (GIGBL). This also leads to the presence of the pseudosubthreshold region in the transfer characteristic. In this paper, we report a novel poly-Si multiple-gate TFT (MG-TFT), where the front gate consists of three sections with two different materials, in order to reduce the OFF-state leakage current with no significant change in the ON-state current. We demonstrate that the dominant conduction mechanism in the channel can be controlled entirely by the accumulation charge density modulation by the gate (ACMG) instead of the GIGBL, leading to a steep subthreshold slope without any pseudosubthreshold region when compared to an asymmetrical double-gate poly-Si TFT (DG-TFT), resulting in a significantly reduced OFF-state leakage current. Using two-dimensional (2-D) and two-carrier device simulation, we have analyzed the various performance and design considerations of the MG-TFT and explained the reasons for the improved performance of the MG-TFT.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:5 ,  Issue: 4 )

Date of Publication:

Dec. 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.