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Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices

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6 Author(s)
Kuo, Y.-H. ; Solid State & Photonics Lab., Stanford Univ., CA, USA ; Yu, X. ; Fu, J. ; Solomon, G.S.
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Fully-strained and high-quality Ge-rich SiGe films are grown on Ge-lattice-matched substrates by molecular beam epitaxy. Ge/SiGe quantum well structures are characterized by low-temperature photoluminescence and exhibit efficient quantum confinement and band edge emission.

Published in:

Lasers and Electro-Optics, 2005. (CLEO). Conference on  (Volume:3 )

Date of Conference:

22-27 May 2005