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Fabrication of all-epitaxial semiconductor laser using selective interface fermi-level pinning

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5 Author(s)
J. Ahn ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; S. Freisem ; D. Lu ; D. Gazula
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All epitaxial fully planarized GaAs based semiconductor lasers are demonstrated using a selective Fermi-level pinning at a heterointerface. The results show that this method provides efficient self-aligned current- and mode-confinement and mode controllability by intracavity patterning.

Published in:

(CLEO). Conference on Lasers and Electro-Optics, 2005.  (Volume:1 )

Date of Conference:

22-27 May 2005