Skip to Main Content
Sideband generators (SBGs) are used in the submillimeter region as tunable high-power sources. Unfortunately, as the frequencies approach 1 THz, the performance of single-diode sideband generators deteriorates due to increased series resistance and parasitic capacitance that limits the impedance tuning of the diode. This results in limited output power and reduced carrier-to-sideband conversion efficiency. In this paper, we describe efforts to improve the conversion efficiency and power handling capacity of sideband generators by incorporating multidiode planar structures that permit power-combining techniques to be employed.