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Planar multi-diode sideband generators for terahertz applications

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6 Author(s)
Haiyong Xu ; Dept. of Phys., Virginia Univ., Charlottesville, VA, USA ; Zhiyang Liu ; Hesler, J.L. ; Crowe, T.W.
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Sideband generators (SBGs) are used in the submillimeter region as tunable high-power sources. Unfortunately, as the frequencies approach 1 THz, the performance of single-diode sideband generators deteriorates due to increased series resistance and parasitic capacitance that limits the impedance tuning of the diode. This results in limited output power and reduced carrier-to-sideband conversion efficiency. In this paper, we describe efforts to improve the conversion efficiency and power handling capacity of sideband generators by incorporating multidiode planar structures that permit power-combining techniques to be employed.

Published in:

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on  (Volume:2 )

Date of Conference:

19-23 Sept. 2005

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