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An electrically driven mid-infrared solid state modulator

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3 Author(s)
Rutt, H.N. ; Optoelectronics Res. Centre, Univ. of Southampton, UK ; Uppal, Suresh ; Chong Yew Lee

Detailed device fabrication and operation modelling has been undertaken for a mid-infrared, 8-14μm band modulator based on a high purity Germanium p-i-n diode. The results show the crucial importance of optimising material properties and dopant concentrations and profiles for optimum device performance.

Published in:
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on  (Volume:1 )

Date of Conference: 19-23 Sept. 2005

Page(s):
281 - 282 vol. 1
Print ISBN:
0-7803-9348-1
INSPEC Accession Number:
8733397
Digital Object Identifier :
10.1109/ICIMW.2005.1572518
Product Type:
Conference Publications

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