By Topic

A field-effect GaAs laser diode with controlled carrier distribution in central and satellite valleys

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sutkus, K. ; City Univ. of New York, NY, USA ; Shum, Kai ; Alfano, R.R.

The transient behavior of a field-effect GaAs laser diode is modeled under a controlled carrier distribution in the central ( Gamma ) and satellite (S) valleys. The carrier distribution control is achieved by modulating the applied electric field which heats carriers to energies higher than 0.38 eV for Gamma to S scatterings. The numerical analysis of the rate equations shows that picosecond optical pulses can be produced.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 9 )