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A field-effect GaAs laser diode with controlled carrier distribution in central and satellite valleys

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3 Author(s)
K. Sutkus ; City Univ. of New York, NY, USA ; K. Shum ; R. R. Alfano

The transient behavior of a field-effect GaAs laser diode is modeled under a controlled carrier distribution in the central ( Gamma ) and satellite (S) valleys. The carrier distribution control is achieved by modulating the applied electric field which heats carriers to energies higher than 0.38 eV for Gamma to S scatterings. The numerical analysis of the rate equations shows that picosecond optical pulses can be produced.<>

Published in:

IEEE Photonics Technology Letters  (Volume:4 ,  Issue: 9 )