Cart (Loading....) | Create Account
Close category search window

Low-threshold (3.2 mA per element) 1.3 mu m InGaAsP MQW laser array on a p-type substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yamashita, S. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Oka, A. ; Kawano, T. ; Tsuchiya, T.
more authors

A low-threshold 1.3- mu m InGaAsP MQW laser array was fabricated on a p-type InP substrate taking compatibility with n/p/n-type laser-driver circuits into account. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2+or-0.2 mA (per element) and a slope efficiency of 0.27+or-0.01 W/A is obtained.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 9 )

Date of Publication:

Sept. 1992

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.