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Low-threshold (3.2 mA per element) 1.3 mu m InGaAsP MQW laser array on a p-type substrate

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7 Author(s)
Yamashita, S. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Oka, A. ; Kawano, T. ; Tsuchiya, T.
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A low-threshold 1.3- mu m InGaAsP MQW laser array was fabricated on a p-type InP substrate taking compatibility with n/p/n-type laser-driver circuits into account. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2+or-0.2 mA (per element) and a slope efficiency of 0.27+or-0.01 W/A is obtained.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 9 )

Date of Publication:

Sept. 1992

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