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Design of a new CMOS low noise amplifier for ultra wide-band wireless receiver in 0.18 μm technology

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2 Author(s)
Ghosh, P.P. ; Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA ; Enjun Xiao

This paper discusses the design of a new single ended low noise amplifier (LNA), in the 0.18 μm CMOS process, for the ultra wide-band (UWB) of 3.1 GHz to 5.15 GHz. Improved noise figure and excellent input impedance match are achieved using the design. From a power supply of 1.8 V the LNA exhibits a noise figure (NF) of 2.29 dB to 2.48 dB, input reflection coefficient (S11) of less than -14.9 dB and a small signal power gain (S21) of 11.20 dB to 12.10 dB over the whole range. The equation for noise factor is derived for the UWB LNA.

Published in:

Ultra-Wideband, 2005. ICU 2005. 2005 IEEE International Conference on

Date of Conference:

5-8 Sept. 2005

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