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Electrically-pumped Si-laser using nano-particle-modified metal-oxide-Si structures

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5 Author(s)
Ching-Fuh Lin ; Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Liang, Eih-Zhe ; Chu-Ting Huang ; Kung-An Lin
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Measurement on the carrier lifetime shows that the radiative-recombination rate in Si can be enhanced to be more than twice of the non-radiative-recombination rate at large injection current using the nano-particle modified metal-oxide-silicon (MOS) structure. With the enhanced radiative recombination, the device with such a MOS structure exhibits lasing behaviours under forward bias of current injection at room-temperature and cw operation. The laser has the threshold current of 56 mA. The lasing wavelength well corresponds to the Si indirect-bandgap energy.

Published in:

Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE

Date of Conference:

6-10 Nov. 2005