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A FEM punch-through IGBT model using an efficient parameter extraction method

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3 Author(s)
Chibante, R. ; Instituto Superior de Engenhario do Porto (ISEP) ; Araujo, A. ; Carvalho, A.

A finite element physics-based punch-through IGBT model is presented. The model's core is based on solving the ambipolar diffusion equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results

Published in:

Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE

Date of Conference:

6-6 Nov. 2005