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Modeling and optimization approach to robust and low-power FinFET SRAM design in nanoscale era

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3 Author(s)
Bansal, A. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN ; Mukhopadhyay, S. ; Roy, K.

In this paper, we propose a methodology to model and optimize FinFET devices for robust and low-power SRAMs. We propose to optimize the gate sidewall spacer thickness to simultaneously minimize leakage current and drain capacitance to on-current ratio in FinFET. The proposed optimization method reduces subthreshold leakage (by 82%) and gate leakage (by 33%) in devices. Moreover, the optimization also reduces the sensitivity of the device threshold voltage to the fluctuations in silicon thickness (by 32%) and gate length (by 73%). Our analysis shows that optimization of spacer thickness results in 70% reduction in cell leakage and improves cell read failure probability (by 200times) compared to conventional FinFET SRAM

Published in:

Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005

Date of Conference:

21-21 Sept. 2005

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