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XDXMOS: a novel technique for the double-gate MOSFETs logic circuits - to achieve high drive current and small input capacitance together

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2 Author(s)
H. Koike ; Inst. of Nanoelectron. Res., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan ; T. Sekigawa

A novel technique for the double-gate MOSFETs digital circuit, called cross-drive XMOS (XDXMOS), is proposed. Detailed mixed-mode circuit and device simulation results show that, with a simple addition of a register to the double-gate device in the 4-terminal operation mode, XDXMOS can achieve high drive current and small input capacitance together, and that 45% better power consumption performance and 25% better operation speed performance improvement over the conventional 3-terminal operation mode can be attained, while maintaining the ability for such useful techniques as the multiple-Vt method and the adaptive Vt control.

Published in:

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005.

Date of Conference:

18-21 Sept. 2005