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Low-threshold, low beam divergence GaSb-based quantum-well diode-lasers emitting in the 1.9 to 2.4 μm wavelength range

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6 Author(s)
Rattunde, M. ; Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany ; Geerlings, E. ; Hulsmann, A. ; Schmitz, J.
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Here we will present a new design for the vertical waveguide structure of (AlGaIn)(AsSb)-based diode lasers leading to a reduced beam divergence in the fast axis of only 44° full width at half maximum (FWHM), compared to 67° FWHM of a standard broad waveguide design. Uncoated ridge-waveguide diode lasers emitting at 2.3 μm with a 1000×64 μm2 geometry showed a threshold current density of 180 A/cm2 (or 60 A/cm2 per QW), which is among the lowest values, reported for GaSb-based diode lasers.

Published in:

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Date of Conference:

12-17 June 2005