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Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 μm

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7 Author(s)
I. C. Sandall ; Sch. of Phys. & Astron., Cardiff Univ., UK ; C. L. Walker ; P. M. Smowton ; I. R. Sellers
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This work examines the radiative and remaining nonradiative recombination processes in quantum dot lasers with low levels of defect related nonradiative recombination. The segmented contact method is used to obtain the spontaneous emission rate spectra of a 5-layer InAs/In0.15Ga0.85As DWELL structure at drive current densities between 22 and 490 Acm-2 taken at 300 K.

Published in:

EQEC '05. European Quantum Electronics Conference, 2005.

Date of Conference:

12-17 June 2005