By Topic

Modeling passive mode-locking in vertical-external-cavity surface-emitting semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
J. Mulet ; Inst. Mediterrani d Estudis Avan ats, CSIC, Palma de Mallorca, Spain ; S. Balle

In this paper, a novel theoretical description of passive mode-locking in electrically-driven VECSELs is developed. Results reveal that the onset of mode locking depends on the interplay of three different effects namely, contrast in saturation fluences, spot area ratio, and balance between intensities at the active medium and absorber. Thus, the standing wave effect in the vertical cavities can be used to improve the mode-locking performance. In order to favor mode locking, emitter and absorber have to be tightly coupled in order to saturate the latter in their mutual dynamical interplay.

Published in:

EQEC '05. European Quantum Electronics Conference, 2005.

Date of Conference:

12-17 June 2005