A 100 V/100 W monolithic power audio amplifier in mixed bipolar-MOS technology

The monolithic power audio amplifier described was able to deliver up to 100-W sinusoidal output power into an 8- Omega load. The device, suitable for high-fidelity applications, was developed in a mixed bipolar-MOS high-voltage technology. This process allows the integration on the same chip of two or more power MOS devices, insulated from each other, together with low-level signal and high-voltage components. The final elements are two n-channel power double-diffused MOS (DMOS) transistors with extremely high current capability. The architecture of the structure, which is the result of the merging of the DMOS silicon-gate process and the standard junction isolation technique, is shown. The IC performance is discussed.<
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