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A new gate driver integrated circuit for IGBT devices with advanced protections

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6 Author(s)
Dulau, L. ; SGS-Thomson Microelectron., Grenoble, France ; Pontarollo, S. ; Boimond, A. ; Garnier, J.-F.
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The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.

Published in:

Power Electronics, IEEE Transactions on  (Volume:21 ,  Issue: 1 )

Date of Publication:

Jan. 2006

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