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Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter

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1 Author(s)
J. Brown ; Vishay Siliconix, Bracknell, UK

This paper uses generic equations to model the switching performance of metal oxide semiconductor field effect transistors (MOSFETs). Two MOSFETs with different gate structures are analyzed and switching times are presented, which are compared against practical measurements. It is shown that it is possible to get a reasonable accuracy of the switching performance of a MOSFET in a nonsynchronous buck converter, but care must be taken to ensure the correct values of the parameters are used. It is also shown that the MOSFET with the thick bottom oxide gate provides a faster switching instant when compared to a conventional U-Trench gated MOSFET.

Published in:

IEEE Transactions on Power Electronics  (Volume:21 ,  Issue: 1 )