Cart (Loading....) | Create Account
Close category search window
 

Hf-profile engineered HfSiON gate dielectrics for 65nm LSTP CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Inoue, M. ; Wafer Process Eng. Dev. Div., Renesas Technol. Corp., Hyogo, Japan ; Mizutani, M. ; Nomura, K. ; Yugami, J.
more authors

Gate dielectric as thin as E0T=1.6nm or below is required for 65nm CMOS devices according to ITRS (2003). High-k materials such as HfSiON with satisfactory low leakage are expected as an alternative gate dielectric. However, two big problems have been revealed in the use of HfSiON gate dielectric; (i) Reduction of effective carrier mobility (μeff) in scaled EOTs and (ii) high K, in pFETs as stated in C. Hobbs et al. (2003) and L.-A. Ragnarsson et al. (2003). Here, we propose Hf-profile engineering; higher Hf concentration near the gate electrode and lower near the substrate for improving degraded μeff. Combination of metal-Hf PVD on interface layer (IL) with precise thickness control and post oxidation is a suitable technique to form such Hf-profile engineered HfSiON (HPE-HfSiON) films. In order to lower K, in pFETs, we present forward-bias technique as presented in M. Miyazaki et al. (2002).

Published in:

Future of Electron Devices, 2004. International Meeting for

Date of Conference:

26-28 July 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.