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Impact of boron penetration from S/D-extension on gate leakage current and gate-oxide reliability for 65-nm node CMOS and beyond

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17 Author(s)
Yamashita, T. ; Renesas Technol. Corp., Hyogo, Japan ; Shiga, K. ; Hayashi, T. ; Umeda, H.
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For scaled CMOSFETs, it becomes much more difficult to ensure sufficient reliability of gate-oxide film, since power supply voltage is not scaled proportionally with gate-oxide. As well as the increase of the electrical stress that put on the gate-oxide, miniaturization effect should be cared. This paper demonstrates the performance of 65-nm node CMOSFETs, focused on gate oxide reliability, which is found to become crucial issue for short-channel pMOSFETs. Boron penetration from S/D-extension is found to increase gate leakage current and degrade gate oxide integrity. Fabrication process that suppresses the boron penetration is discussed, and optimized transistor characteristics for low operational power (LOP) and low standby power (LSTP) devices are presented.

Published in:

Future of Electron Devices, 2004. International Meeting for

Date of Conference:

26-28 July 2004

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