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Wafer mapping of bulk traps in silicon using scanning capacitance transient spectroscopy

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3 Author(s)
Takahashi, M. ; Hyogo Univ., Himeji, Japan ; Yoshida, Haruhiko ; Satoh, S.

In this paper, we report a newly developed scanning capacitance transient spectroscopy (SCTS) that enables the electrical characterization of semiconductor wafers by contactless and nondestructive fashion. The validity of the developed system has been demonstrated using a partially Au-doped Si wafer.

Published in:

Future of Electron Devices, 2004. International Meeting for

Date of Conference:

26-28 July 2004