Reliability analysis of low temperature poly-Si thin film transistors by high spatial resolution thermography

Low temperature poly-Si thin film transistors (TFTs) have been widely studied as the promising material for future displays, such as system on panel. In order to realize the future display, improvement of reliability is one of the important issues to ensure their performances. As a cause of the degradation, threshold voltage shift by joule heating is a serious problem (Sameshima et al., 1996). The glass or plastic substrates normally have poor thermal conductivity. Therefore, it is very important to analyze the thermal distribution of the devices under the real operating conditions. In this study, we have analyzed the low temperature poly-Si thin film transistors using high spatial resolution thermography (Infra Scope II).