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A low distortion 38 GHz-band high power MMIC amplifier

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4 Author(s)
Murase, Y. ; Syst. Devices Res. Labs., NEC Corp., Sagamihara, Japan ; Kasahara, K. ; Yamanoguchi, K. ; Matsunaga, K.

The growth of the point to point and the point to multipoint radio markets has produced a demand for high power, low distortion and cost effective amplifier at quasi-millimeter-wave. This paper describes a GaAs-based monolithic microwave integrated circuit (MMIC) amplifier having watt-level power performance, excellent third order intermodulation distortion (IMD3) characteristic at 38 GHz-band for various communication system applications. We have developed GaAs-based double-doped heterojunction FETs (HJFET) for quasi-millimeter-wave MMIC amplifier, using highly-uniform 0.2 μm WSi-gate process on 5-inch GaAs wafer.

Published in:

Future of Electron Devices, 2004. International Meeting for

Date of Conference:

26-28 July 2004

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