By Topic

Silver nanoparticles formation in thermal oxide on silicon by negative-ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Arai, Nobutoshi ; Devices Technol. Res. Labs., Sharp Corp., Tenri, Japan ; Tsuji, H. ; Adachi, K. ; Kotaki, H.
more authors

Nanoparticles in insulators exhibit unique electrical properties due to single electron effect. This paper studied about formation of nanoparticles in thin silicon dioxide film by negative ion implantation and electrical properties, such as Coulomb blockade. By silver negative-ion implantation of 30 keV, 1 × 10 ions/cm2 into 50-nm-thick SiO2 film on Si, Ag nanoparticles with diameter of 3 nm were created in the film. After annealing at 700°C, the film showed considerably clear steps in I-V curve measured at room temperature. These steps are considered to be due to Coulomb blockade of the Ag nanoparticles. Thus, negative ion implantation was found to be applicable to form metal nanoparticles with sufficiently small size for obtaining Coulomb blockade phenomena at room temperature.

Published in:

Future of Electron Devices, 2004. International Meeting for

Date of Conference:

26-28 July 2004