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In this paper, the properties of GaN based gas sensor with different thickness of platinum (Pt), prepared by sputtering method and annealed in air at 600°C were investigated. AFM micrography showed that the GaN and Pt films are grain-like, and the grain size increases after annealing upon gas exposure. The interaction between the Pt clusters and the GaN grains was investigated. Sensors fabricated with the Pt films exhibited a significant increase in their sensitivity and selectivity towards H2 detection when the thickness of Pt films is increased. Changes in the surface roughness for the different thickness of Pt/GaN due to specific adsorptions are presented. Possible applications and improvements of this technique are discussed.