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Investigations of surface roughness of GaN based gas sensor using atomic force microscope

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6 Author(s)
Hudeish, A.Y. ; Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia ; Abdul Aziz, A. ; Hassan, Z. ; Tan, C.K.
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In this paper, the properties of GaN based gas sensor with different thickness of platinum (Pt), prepared by sputtering method and annealed in air at 600°C were investigated. AFM micrography showed that the GaN and Pt films are grain-like, and the grain size increases after annealing upon gas exposure. The interaction between the Pt clusters and the GaN grains was investigated. Sensors fabricated with the Pt films exhibited a significant increase in their sensitivity and selectivity towards H2 detection when the thickness of Pt films is increased. Changes in the surface roughness for the different thickness of Pt/GaN due to specific adsorptions are presented. Possible applications and improvements of this technique are discussed.

Published in:

Sensors and the International Conference on new Techniques in Pharmaceutical and Biomedical Research, 2005 Asian Conference on

Date of Conference:

5-7 Sept. 2005

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