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5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMTs

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3 Author(s)
C. Yuen ; Litton, Santa Clara, CA, USA ; Y. C. Pao ; N. G. Bechtel

A high-gain InP MMIC cascode distributed amplifier was developed which has 12 dB of gain from 5 to 60 GHz with over 20-dB gain control capability and a noise figure of 2.5-4 dB in the Ka band. Lattice-matched InAlAs/InGaAs cascode HEMTs on InP substrate with 0.25-μm gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimension of 2.3 mm×0.9 mm. The gain/noise figure advantages of the InP HEMT over the AlGaAs HEMT and the superior gain performance of the cascode HEMT over the common-source HEMT are demonstrated

Published in:

IEEE Journal of Solid-State Circuits  (Volume:27 ,  Issue: 10 )