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Design of polarization-insensitive ring resonators in silicon-on-insulator using MMI couplers and cladding stress engineering

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3 Author(s)
Xu, D.-X. ; Inst. for Microstructural Sci., Nat. Res. Council Canada, Ottawa, Ont., Canada ; Janz, S. ; Cheben, P.

A novel silicon-on-insulator (SOI) ring resonator design is described that uses a 2 × 2 multimode interference coupler to achieve polarization-independent coupling, and cladding stress induced birefringence control to eliminate the difference in round-trip phase accumulation between the transverse-electric and transverse-magnetic polarized modes. The design parameters are determined for polarization-independent SOI ring resonators with couplers having a 50 : 50 or 15 : 85 splitting ratio, and 1.5-μm ridge height and width. As designed, the resonators offer a polarization-independent free-spectral range of 0.5 nm for a ring radius of 200 μm, and a quality factor Q as high as 55 000.

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 2 )