Referenced Items are not available for this document.
We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which has a GaN-AlGaN multiquantum-well (MQW) active layer and was grown on low-dislocation-density Al0.18Ga0.82N template. The Al0.18Ga0.82N template was produced by the hetero-epitaxial lateral overgrowth technology on the low-cost sapphire substrate, and has partially low-dislocation density of approximately 2×107 cm-2. The lasing operation under pulsed current injection was achieved with the threshold current density of 7.3 kA/cm2 and the operating voltage of 10.4 V.
Published in:
Selected Topics in Quantum Electronics, IEEE Journal of
(Volume:11
,
Issue:
5
)
Date of Publication: Sept.-Oct. 2005
- Page(s):
- 1069 - 1073
- ISSN :
- 1077-260X
- INSPEC Accession Number:
- 8717205
- Digital Object Identifier :
- 10.1109/JSTQE.2005.853743
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 December 2005
- Issue Date :
- Sept.-Oct. 2005
- Sponsored by :
- IEEE Photonics Society
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