Skip to Main Content
We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which has a GaN-AlGaN multiquantum-well (MQW) active layer and was grown on low-dislocation-density Al0.18Ga0.82N template. The Al0.18Ga0.82N template was produced by the hetero-epitaxial lateral overgrowth technology on the low-cost sapphire substrate, and has partially low-dislocation density of approximately 2×107 cm-2. The lasing operation under pulsed current injection was achieved with the threshold current density of 7.3 kA/cm2 and the operating voltage of 10.4 V.
Selected Topics in Quantum Electronics, IEEE Journal of (Volume:11 , Issue: 5 )
Date of Publication: Sept.-Oct. 2005