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Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD

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9 Author(s)

1.3- and 1.55-$mu$m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs–InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3$mu$m) and 2.0 (for 1.55 $mu$m) mW single mode power at 25$^circ$C, 0.6 mW single mode power at 85$^circ$C and lasing operation at$≫hbox100^circ$C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-$mu$m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-$mu$m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:11 ,  Issue: 5 )