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Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD

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9 Author(s)

1.3- and 1.55- \mu m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs–InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 \mu m) and 2.0 (for 1.55  \mu m) mW single mode power at 25 ^\circ C, 0.6 mW single mode power at 85 ^\circ C and lasing operation at \gg \hbox {100^\circ} C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3- \mu m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55- \mu m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.

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IEEE Journal of Selected Topics in Quantum Electronics  (Volume:11 ,  Issue: 5 )