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Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration

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12 Author(s)
Liu, Y.X. ; National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan ; Endo, K. ; Masahara, M. ; Sugimata, E.
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As advanced FinFET technologies, we have developed the co-integration techniques of the TiN gated high-performance 3T- and flexible Vth 4T-FinFETs. By using the conventional reactive sputtering of TiN, the well symmetrical Vth N- and P-channel 3T-FinFETs and the high Vth-controllable 4T-FinFETs using the resist etch-back process have been demonstrated. The developed technologies are attractive to materialize the high-performance and power-managed FinFET CMOS circuits.

Published in:

SOI Conference, 2005. Proceedings. 2005 IEEE International

Date of Conference:

3-6 Oct. 2005