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Analysis of drain-to-body band-to-band tunneling in double gate MOSFET

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3 Author(s)
Ananthan, H. ; Dept. of ECE, Purdue Univ., West Lafayette, IN, USA ; Bansal, A. ; Roy, K.

An analytical model is proposed for drain-to-body band-to-band tunneling leakage in nanoscale symmetric and asymmetric double-gate MOS devices. The model is used to analyze the impact of technology and circuit parameters, and suggest ways of minimizing this leakage.

Published in:

SOI Conference, 2005. Proceedings. 2005 IEEE International

Date of Conference:

3-6 Oct. 2005