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This work presents an ultra-low power RF LBJT on SOI. The Johnson's product (fτ ×BVCEO) of the fabricated LBJTs ranges between 190-300 GHz-V. The fmax of the optimal device reaches 46 GHz at collector current density of only 0.15mA/μm2. This LBJT is compatible with SOI-CMOS for SOI-BiCMOS integration, an ideal technology for RF and mixed-signal SoC.