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Novel ultra-low power RF lateral BJT on SOI-CMOS compatible substrate for SoC applications

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10 Author(s)

This work presents an ultra-low power RF LBJT on SOI. The Johnson's product (fτ ×BVCEO) of the fabricated LBJTs ranges between 190-300 GHz-V. The fmax of the optimal device reaches 46 GHz at collector current density of only 0.15mA/μm2. This LBJT is compatible with SOI-CMOS for SOI-BiCMOS integration, an ideal technology for RF and mixed-signal SoC.

Published in:

SOI Conference, 2005. Proceedings. 2005 IEEE International

Date of Conference:

3-6 Oct. 2005