Referenced Items are not available for this document.
This work deals with the electrical characterization down to 4K of fully depleted SOI MOSFET with a physical gate length down to 10nm. Temperature measurements are used to highlight source to drain tunneling: which is evidenced at room temperature for the first time. Finally resonant tunneling effect is observed.
Published in:
SOI Conference, 2005. Proceedings. 2005 IEEE International
Date of Conference: 3-6 Oct. 2005
- Page(s):
- 34 - 35
- ISSN :
- 1078-621X
- Print ISBN:
- 0-7803-9212-4
- INSPEC Accession Number:
- 8748467
- Digital Object Identifier :
- 10.1109/SOI.2005.1563525
- Product Type:
- Conference Publications
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