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In this paper, we report the influence of the TiN metal gate thickness on fully depleted (FD) silicon-on-insulator (SOI) MOS transistors with SiO2 and HfO2 gate dielectrics. The threshold voltage as well as the electrical oxide thickness (EOT), the gate leakage current and the channel mobility are impacted. Smaller the TiN layer is, better are the transistors characteristics. This is due to a lower charge effect when the TiN thickness decreases.