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Transport and leakage in super-critical thickness strained silicon directly on insulator MOSFETs with strained Si thickness up to 135 nm

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7 Author(s)

In this work, we study both FD- and PD-SSOI with aggressive TSi of up to 135 nm for 14% SSOI (14% Ge equivalent strain). We have demonstrated that mobility in 14% SSOI is independent of the strained Si thickness, even for as grown films 10× thicker than the critical thickness. Off-state current also remains independent of TSi. The successful fabrication of PD-SSOI with electron mobility enhancement maintained at 1.5×, for high channel doping and strained Si thickness up to 135 nm, was also demonstrated, showing promise for thicker film PD-SOI applications.

Published in:

SOI Conference, 2005. Proceedings. 2005 IEEE International

Date of Conference:

3-6 Oct. 2005