Referenced Items are not available for this document.
The advantages of 0.98 mu m InGaAs/GaAs/InGaP lasers with an InGaAsP SCH layer were investigated by comparing them with identical lasers with a conventional GaAs SCH layer. A higher internal quantum efficiency of 0.817 and low internal loss of 2.11 cm-1 were obtained due to the large conduction band discontinuity. Moreover, high power operation of 80 mW from an uncoated facet was obtained up to 70 degrees C with the laser with the InGaAsP SCH layer.
Published in:
Electronics Letters
(Volume:28
,
Issue:
17
)
Date of Publication: 13 Aug. 1992
- Page(s):
- 1639 - 1640
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4245778
- Digital Object Identifier :
- 10.1049/el:19921043
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 13 Aug. 1992
- Sponsored by :
- Institution of Engineering and Technology
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