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The advantages of 0.98 mu m InGaAs/GaAs/InGaP lasers with an InGaAsP SCH layer were investigated by comparing them with identical lasers with a conventional GaAs SCH layer. A higher internal quantum efficiency of 0.817 and low internal loss of 2.11 cm-1 were obtained due to the large conduction band discontinuity. Moreover, high power operation of 80 mW from an uncoated facet was obtained up to 70 degrees C with the laser with the InGaAsP SCH layer.
Date of Publication: 13 Aug. 1992