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Atomistic simulations of long-range strain and spatial asymmetry effects in multimillion-atom single and double quantum dot nanostructures

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6 Author(s)
Klimeck, G. ; Network for Computational Nanotechnology, School of Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette IN 47907, USA and Jet Propulsion Laboratory, California Institute of Technology, Pasadena CA 91109, USA, E-mail: ; Korkusinski, M. ; Haiying Xu ; Seungwon Lee
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The Nanoelectronic Modeling Tool NEMO-3D is a simulator providing quantitative estimates for the strain distribution and the singleparticle electronic structure of semiconductor nanodevices, such as self-assembled quantum dots, quantum wells and wires. Both strain and electronic structure are computed using semi-empirical nearest-neighbor tight-binding schemes implemented on the atomistic level. The software tool is parallelized using MPI, which makes it possible to treat multimillion-atom systems. This work reports on application of the NEMO-3D tool to single and coupled quantum dot nanostructures. The spatial extent and directionality of the strain field produced by a single InAs quantum dot embedded in the GaAs barrier material is explored. In the multidot systems, the electron and hole states are computed as a function of the interdot distance for vertically coupled double-dot molecules.

Published in:

Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on

Date of Conference:

01-03 Sept. 2005