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Exploring Transistor Width Effect on Stress-induced Performance Improvement in PMOSFET with SiGe Source/Drain

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7 Author(s)
Xin Wang ; Texas Instruments Incorporated, Silicon Technology Development, Dallas, TX 75243 ; M. Huang ; C. Bowen ; L. Adam
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Stress distribution in the Si channel regions of SiGe source/drain PMOSFETs with various widths is studied by 3D simulations. The width dependence of performance improvement is analyzed via device simulations.

Published in:

2005 International Conference On Simulation of Semiconductor Processes and Devices

Date of Conference:

01-03 Sept. 2005