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The efficacy of the thermalized parameter-free effective potential approach described elsewhere is examined with regard to its application to modeling of alternative device technologies. Our investigations suggest that the Hartree correction is significant only for very high doping densities, as it is the case in deca-nano MOSFETs. For low doping densities, as it is usually the case in alternative device structures, such as dual-gate and FinFET devices, the Hartree term can be neglected and the Barrier term needs to be included in the model only. Since the Barrier field is pre-calculated in the initialization stages of device simulation, it does not add any additional computational cost, thus leading to a very effective way of including quantum mechanical space-quantization effects in the computational model.