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A new method of determining statistical compact model parameters is proposed. The variations of measured device characteristics can be efficiently translated into the variations of a set of transistor model parameters. Since the target of fitting is not the I-V curves of individual samples, but the statistically analyzed results of the I-V data, the extraction is fulfilled in only one optimization step. The method is applicable to any compact model platforms. Therefore, high accuracy and efficiency can be achieved at the same time.
Date of Conference: 01-03 Sept. 2005