By Topic

Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. Pourfath ; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria. Phone: +43-1-58801/36014, Fax: +43-1-58801/36099, E-mail: ; H. Kosina ; B. H. Cheong ; W. J. Park

In this work the DC and AC responses of ohmic contact carbon nanotube field effect transistors are investigated. To account for ballistic transport in these devices, the coupled system of Poisson and Schrödinger equations was solved. Good agreement between simulation and experimental results confirms the validity of this model. For AC analysis the quasi static approximation was assumed. Simulation results indicate the both the DC and AC response are effectively dependent on the device geometry. Therefore by careful device design, optimized device characteristics can be achieved.

Published in:

2005 International Conference On Simulation of Semiconductor Processes and Devices

Date of Conference:

01-03 Sept. 2005