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Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors

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4 Author(s)
M. Pourfath ; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria. Phone: +43-1-58801/36014, Fax: +43-1-58801/36099, E-mail: pourfath@iue.tuwien.ac.at ; H. Kosina ; B. H. Cheong ; W. J. Park

In this work the DC and AC responses of ohmic contact carbon nanotube field effect transistors are investigated. To account for ballistic transport in these devices, the coupled system of Poisson and Schrödinger equations was solved. Good agreement between simulation and experimental results confirms the validity of this model. For AC analysis the quasi static approximation was assumed. Simulation results indicate the both the DC and AC response are effectively dependent on the device geometry. Therefore by careful device design, optimized device characteristics can be achieved.

Published in:

2005 International Conference On Simulation of Semiconductor Processes and Devices

Date of Conference:

01-03 Sept. 2005