By Topic

Passive modelocking of InGaAsP/InP laser diode over wide operating temperature range

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Tan, W.K. ; Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK ; Wong, H.Y. ; Kelly, A.E. ; Sorel, M.
more authors

The passive modelocked operation of an InGaAsP/InP laser diode, with a novel design of adaptable saturable absorber, up to an operating temperature of 75°C, is reported. To the authors' best knowledge, this is the first demonstration of high-temperature operation of a passively modelocked laser diode. The effect of the operating temperature on the operating frequency and the tuning range is described.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 25 )