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Low operating currents of monolithically integrated 780 nm/650 nm-band self-sustained pulsating lasers with silicon nitride current blocking layers

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3 Author(s)
Y. C. Shin ; Dept. of Electron. Eng., Korea Univ., Seoul, South Korea ; S. M. Whang ; T. G. Kim

The characteristics of monolithically integrated 780 nm/650 nm-band self-sustained pulsating (SSP) lasers with silicon nitride current blocking layers are reported. The record low operating current of 60 mA at 5 mW, 70°C and a characteristic temperature of 90 K over 20 to 70°C were obtained from the 650 nm-band SSP lasers. The attenuation factor of the visibility was observed to be as low as 0.3, which ensures SSP operations of the dual-mode lasers.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 25 )