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Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET

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4 Author(s)
Morris, H. ; Dept. of Math., San Jose State Univ., Claremont, CA, USA ; Cumberbatch, E. ; Tyree, V. ; Abebe, H.

Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward. A detailed comparison with test data is presented and the model is shown to be effective over a range of device geometries for a half micrometre technology and voltages up to and including the kink attributable to impact ionisation.

Published in:

Circuits, Devices and Systems, IEE Proceedings -

Date of Publication:

9 Dec. 2005

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