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Highly scalable ballistic injection AND-type (BiAND) flash memory

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6 Author(s)
Meng-Yi Wu ; Nat. Tsing-Hua Univ., Hsinchu, Taiwan ; Sheng-Huei Dai ; Shu-Fen Hu ; E. C. -S. Yang
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An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

Published in:

IEEE Transactions on Electron Devices  (Volume:53 ,  Issue: 1 )