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GaN MSM UV photodetectors with titanium tungsten transparent electrodes

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9 Author(s)
Wang, C.K. ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan ; Chang, S.J. ; Su, Y.K. ; Chiou, Y.Z.
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GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with titanium tungsten (TiW) transparent electrodes were fabricated and characterized. It was found that the 10-nm-thick TiW film deposited with a 300-W RF power can still provide a reasonably high transmittance of 75.1% at 300 nm, a low resistivity of 1.7×10-3 Ω·cm and an effective Schottky barrier height of 0.773 eV on u-GaN. We also achieved a peak responsivity of 0.192 A/W and a quantum efficiency of 66.4% from the GaN ultraviolet MSM photodetector with TiW electrodes. With a 3-V applied bias, it was found that minimum noise equivalent power and maximum D* of our detector were 1.987×10-10 W and 6.365×109 cmHz0.5W-1, respectively.

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 1 )