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Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

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4 Author(s)
Selmi, L. ; Dept. of Electron., Bologna Univ., Italy ; Menozzi, R. ; Gandolfi, P. ; Ricco, B.

A detailed numerical analysis of the source and drain parasitic resistances and effective channel length of state-of-the-art GaAs MESFETs is presented. Two-dimensional simulations are used to evaluate different criteria (physical and electrical) for defining the device parameters of interest, as well as to study their gate voltage dependence. To this purpose a novel criterion which provides a simple procedure to determine the series resistances as a function of gate bias is proposed

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 9 )

Date of Publication:

Sep 1992

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