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QUBiC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

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22 Author(s)
Deixler, P. ; Philips Semicond., Hopewell Junction, NY, USA ; Letavic, T. ; Mahatdejkul, T. ; Bouttement, Y.
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QUBiC4plus is a RF-BiCMOS production technology tailored for 'silicon-based' RF-SiP. The device menu includes 3 varactor styles, 7 resistor types, novel complimentary 24 V PMU devices, hi-k MIM capacitors, RC-triggered ESD protection and a choice between all-silicon, SiGe and SiGe:C bipolar transistors. Buried-p+ guardrings, DTI and very-high resistivity substrates ensure excellent circuit-block isolation and high-quality inductors. The advanced design flow features state-of-the-art models.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Date of Conference:

9-11 Oct. 2005