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Study of bipolar transistor matching at high current level with various test configurations leading to a new model approach

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5 Author(s)
Bordez, S. ; STMicroelectronics, Crolles, France ; Danaie, S. ; Difrenza, R. ; Vildeuil, J.-C.
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Matching of bipolar transistors has been characterized for high currents. The predominant impact of access resistance mismatch is clearly demonstrated, and matching models are suggested. Moreover, matching results dependency on test configurations is studied.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Date of Conference:

9-11 Oct. 2005

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