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A 40GHz superheterodyne receiver integrated in 0.13μm BiCMOS SiGe:C HBT technology

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5 Author(s)
Pruvost, S. ; STMicroelectronics, Crolles, France ; Telliez, I. ; Danneville, F. ; Dambrine, G.
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This paper presents a superheterodyne down-converter realized using SiGe:C BiCMOS HBT. Based on a single-ended architecture, the low noise amplifier (LNA), the fundamental oscillator and the mixer were first characterized separately and finally the down-converter. The down-converter exhibits conversion gain of 13 dB and NFDSB of 7 dB, and the associated oscillator performs phase noise of -90 dBc/Hz at 1 MHz from the 40 GHz carrier frequency.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Date of Conference:

9-11 Oct. 2005